Hi, everyone!
Thank you all for giving me good responses. It took me some time to figure things out but I've made it. CalcZAF did the trick and it works. My mistake was that i didn't understand correctly what exactly the thin film correction does - I was expecting quantitative analysis results, which would include the substrate, when actually having the correction enabled, but it does the opposide - duhh...
Anyway, I would like to follow up with an actual research related question:
We are still talking about the same 170 nm thick TiN film, which was measured with a bruker FEI Quanta 200 FEG SEM. The measurements were done at 2, 5, 10, 20 and 30 keV. In the chart, I have subtracted Si substrate and some trace elements, comparing only the mass fraction of titanium and nitrogen. These are the results that i got:
It is clearly visible that when the energy becomes higher it starts to register more and more nitrogen and less Titanium. It looks weird. The measurement of other, thinner TiN film also returned similar results. It looked like it is some kinf of malfunction, but, surprisingly CASINO simulation and CalcZAF calculation of a similar model film,consisting of 40% Ti and 60% of Nitrogen returned very similar results:
And these are the results i got, when using the CalcZAF thin film correction:
And the up-down trend is also visible here, although not nearly as much. It seems that CalcZAF thin film correction did a pretty good job, but what could be the explanation for the other two: the actual measurement and the simulation?
So my question is: what could be the causes for registering much more N and less Ti at higher voltages then there actually is?
Pointman